Presentation Information
[Tu-P2-H-03]Ultrathin Gallium Oxide by Conversion of Gallium Selenide for Deep-UV Photonics and High-Field Dielectrics
〇Nathan Cottam1, Kazi Rahman1, Jonathan Bradford1, Samiyah A Alghamdi1, Ben T Dewes1, Mustaqeem Shiffa1, Tin S Cheng1, Sergei V Novikov1, Christopher J Mellor1, Oleg Makarovskiy1, Manuel Mundszinger2, Johannes Biskupek2, Ute Kaiser2,3, David Gonzalez4, Teresa Ben4, James N O'Shea1, Amalia Patane1 (1. School of Physics and Astronomy, University of Nottingham (UK), 2. Central Facility Materials Science Electron Microscopy, Ulm University (Germany), 3. Institute of Quantum Optics, Ulm University (Germany), 4. Research Institute in Electron Microscopy and Materials Universidad de Cadiz (Spain))
This work focuses on the in operando synthesis of crystalline Ga2O3 via thermal oxidation of high-quality GaSe thin films grown by molecular beam epitaxy. Devices based on these ultrathin oxides show >20 MV cm-1 breakdown fields and solar-blind ultraviolet (UV) sensitivity, supporting applications in nanoelectronics and deep-UV sensing.