[Tu-P2-H] SiC, IGZO, Ga2O3, and diamond

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[Tu-P2-H-05] Tunneling transport via deep levels in p-type diamond Schottky barrier diodes

〇Makoto Kawano¹, Yoshitaka Taniyasu¹, Kazuyuki Hirama¹ (1. NTTBRL (Japan))

We show that the carrier transport mechanism under reverse-bias conditions in permalloy/p-type boron-doped diamond Schottky barrier diodes with a boron concentration of 2.0 × 10¹⁸ cm⁻³ is trap-assisted tunneling via deep levels.