[Th-A1-H] New trend and electronic properties in nitrides

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[Th-A1-H-01] Towards Flat Band Surfaces in Three-Dimensional Wide Band Gap Semiconductors for Electron Spectroscopy Measurements

〇Tanay Tak¹, Jonathan Ludwick², Zachary J Biegler¹, Griffin K Tong¹, Jacques Peretti³, Claude Weisbuch^1,3, Tyson C Back², James S Speck¹ (1. Univ. of California, Santa Barbara (USA), 2. Air Force Res. Lab. (USA), 3. Ecole Polytechnique (France))

We simulate GaN band structures assuming mid-gap Fermi-level pinning to design flat bands. Samples grown by MBE and measured by ARPES appear flat at the surface, enabling the study of the electronic structure of bulk semiconductor materials without surface band-bending effects.