[We-A2-H] Polarization and defect physics in nitrides | ICPS2026

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Session Details

02: Wide-bandgap semiconductors and devices

[We-A2-H]Polarization and defect physics in nitrides

Wed. Aug 19, 2026 11:00 AM - 12:30 PM JST
Wed. Aug 19, 2026 2:00 AM - 3:30 AM UTC

Room H (STAR LIGHT)(Main Tower 43F)

Chair:Xinqiang Wang (Peking Univ.)

11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)

[We-A2-H-01 (Invited)]Correct treatment of polarization fields in wurtzite-structure semiconductors

〇Chris G. Van de Walle¹ (1. University of California, Santa Barbara (USA))

11:30 AM - 12:00 PM JST(2:30 AM - 3:00 AM UTC)

[We-A2-H-02 (Invited)]Hybrid Quantum Defect Complexes in Wide-Bandgap Nitride Materials

〇Gabriele Grosso¹, Saifa Amin¹, Aidan Jimenez¹, Enrique Mejia¹, Yifeng Cao², Martino Silvetti³, Andrea Biondini³, Marco Govoni³, Jonathan Pelliciari² (1. Advanced Science Research Center, City University of New York (USA), 2. Brookhaven National Laboratory (BNL) (USA), 3. University of Modena and Reggio Emilia (Italy))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[We-A2-H-03]Tailoring Dislocation Cores in Gallium Nitride by in-situ Electron Beam Irradiation

〇Han Yang¹, Lin Yao¹, Xuelin Yang¹, Bo Shen¹ (1. Peking University (China))

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[We-A2-H-04]3D Atomic-scale observation of stacking fault migration

〇Xifan Xu¹, Tao Wang¹, Xinqiang Wang¹ (1. Peking university (China))

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