[We-A2-H] New trend and electronic properties in nitrides | ICPS2026

Advanced Search

Session Details

02: Wide-bandgap semiconductors and devices

[We-A2-H]New trend and electronic properties in nitrides

Wed. Aug 19, 2026 11:00 AM - 12:30 PM JST
Wed. Aug 19, 2026 2:00 AM - 3:30 AM UTC

Room H (Room STAR LIGHT)(Main Tower 43th floor)

Chair:Xinqiang Wang(Peking Univ.)

11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)

[We-A2-H-01]Quantum computation and communication devices using nitride semiconductors and superconductors

〇Debdeep Jena¹ (1. Cornell Univ. (USA))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[We-A2-H-02]Towards Flat Band Surfaces in Three-Dimensional Wide Band Gap Semiconductors for Electron Spectroscopy Measurements

〇Tanay Tak¹, Jonathan Ludwick², Zachary J Biegler¹, Griffin K Tong¹, Jacques Peretti³, Claude Weisbuch^1,3, Tyson C Back², James S Speck¹ (1. Univ. of California, Santa Barbara (USA), 2. Air Force Res. Lab. (USA), 3. Ecole Polytechnique (France))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[We-A2-H-03]Cyclotron resonance in In_xGa_1-xN two-dimensional electron systems

〇Yasutaka IMANAKA¹, Dickson Zakaria Kindole¹, Masatomo Sumiya¹ (1. National Institute for Materials Science (Japan))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[We-A2-H-04]Observation of Local Vibrational Modes of Compensating Defects in Heavily Si-doped AlN

〇Yingming Song¹, Huangshu Zhang¹, Xuelin Yang¹, Bo Shen¹ (1. Peking University (China))

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[We-A2-H-05]Using Hydrogen Plasma to Improve Breakdown Behavior in GaN-on-Si p–n Diodes

〇David Alejandro Plaza Arguello¹, Nevine Rochat¹, Zakariae M'Qaddem¹, Thomas Kaltsounis, Hala El Rammouz¹, Matthieu Lafossas¹, Simona Torrengo¹, Hassan Maher², Thibaud Guillemin³, Yvon Cordier³, Julien Buckley¹, Matthew Charles¹ (1. Inst. CEA-LETI (France), 2. LN2, Univ. of Sherbrooke (Canada), 3. Inst. CRHEA, Univ. Côte d’Azur (France))

Back to Category List