[Th-A1-H] New trend and electronic properties in nitrides

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[Th-A1-H-04] Using Hydrogen Plasma to Improve Breakdown Behavior in GaN-on-Si p–n Diodes

〇David Alejandro Plaza Arguello¹, Nevine Rochat¹, Zakariae M'Qaddem¹, Thomas Kaltsounis, Hala El Rammouz¹, Matthieu Lafossas¹, Simona Torrengo¹, Hassan Maher², Thibaud Guillemin³, Yvon Cordier³, Julien Buckley¹, Matthew Charles¹ (1. Inst. CEA-LETI (France), 2. LN2, Univ. of Sherbrooke (Canada), 3. Inst. CRHEA, Univ. Côte d’Azur (France))

Hydrogen plasma treatment is applied to pseudo-vertical GaN-on-Si p–n diodes to address sidewall-induced leakage and premature breakdown. The hydrogen treatment restores leakage levels while substantially improving breakdown voltage with enhancements of 7× to 15× in the best-performing devices and increasing uniformity across devices