[We-A2-H] New trend and electronic properties in nitrides

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[We-A2-H-05] Using Hydrogen Plasma to Improve Breakdown Behavior in GaN-on-Si p–n Diodes

〇David Alejandro Plaza Arguello¹, Nevine Rochat¹, Zakariae M'Qaddem¹, Thomas Kaltsounis, Hala El Rammouz¹, Matthieu Lafossas¹, Simona Torrengo¹, Hassan Maher², Thibaud Guillemin³, Yvon Cordier³, Julien Buckley¹, Matthew Charles¹ (1. Inst. CEA-LETI (France), 2. LN2, Univ. of Sherbrooke (Canada), 3. Inst. CRHEA, Univ. Côte d’Azur (France))

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