[We-P] Material growth, structural properties, and characterization (bulk, nanowires, dots)

[We-P-09] Study on Source Concentration Dependence of Mist CVD Growth of β-Ga₂O₃ Films Using Gallium Oxide Polycrystalline Powder

〇Sota Yamanaka¹, Shohei Abe¹, Tomohiro Yamaguchi¹, Tohru Honda¹, Khohei Sasaki², Akito Kuramata², Takeyoshi Onuma¹ (1. Kogakuin Univ. (Japan), 2. Novel Crystal Technology, Inc. (Japan))

Mist CVD growth of β-phase gallium oxide using gallium oxide polycrystalline powder was studied in terms of precursor concentration. Growth rate was found to be influenced by Ga supply and parasitic growth in the reactor.