ICPS2026
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Session Details

01: Material growth, structural properties, and characterization (bulk, nanowires, dots)

[We-P]Material growth, structural properties, and characterization (bulk, nanowires, dots)

Wed. Aug 19, 2026 2:00 PM - 3:45 PM JST
Wed. Aug 19, 2026 5:00 AM - 6:45 AM UTC
Kogakuin Univ. (Poster C1)(Poster)

[We-P-01]Low-Surface-Roughness p-Type NiO Thin Films Deposited by Ion Beam Sputtering for Glass Substrate Applications

〇Gui-Sheng Zeng1, Bo-Huei Liao1 (1. National Institutes of Applied Research (Taiwan))

[We-P-02]Temperature Dependence of Free-to-bound Transitions in Cl-doped CdTe

〇Hiroyasu Nakata1, Rinto Tachibana1, Akira Fujimoto2, Yoshiyuki Harada2, Takeshi Hirai3, Yasuo Kanematsu1, Michisato Toyoda1, Kanji Takehana5, Yasutaka Imanaka5, Siro Sakuragi4 (1. Osaka Univ. (Japan), 2. Osaka Inst. of Technology (Japan), 3. Ritsumeikan Univ. (Japan), 4. Union Materials Inc. (Japan), 5. National Inst. for Material Sci. (Japan))

[We-P-03]Band Structure and Photoinduced Electrical Response of As-Prepared TiO2/g-C3N4 Electrodes for Cathodic Protection

Yung-Fu Wu1, Cheng-Yu Hsu1, Yu-Chen Cheng2, 〇Tzu-Hsuan Tsai2 (1. Dept. of Chemical Engineering, Ming Chi Univ. of Tech. (Taiwan), 2. Inst. of Mineral Resources Engineering, National Taipei Univ. of Tech. (Taiwan))

[We-P-04]A Meshless Smoothed Particles Approach for Carriers Transport in Semiconductor

〇Semen Alexandrovich Murzov1 (1. All-Russia Research Institute of Automatics named after N L Dukhov (Russia))

[We-P-05]Growth of Vanadium Dioxide Nanoparticles Using Solid State Dewetting on Sapphire Substrate

〇Ananya Borkotoky1, Amit Verma1 (1. IIT Kanpur (India))

[We-P-06]Non-Arrhenius Transport in Mixed Conducting Disordered Chalcogenide Systems

〇Masahiro Ikeda1, Masaru Aniya2 (1. National Institute of Technology, Oita College (Japan), 2. Kumamoto Univ. (Japan))

[We-P-07]Raman Analysis of Vibrational Modes in Entropy Stabilized Spinel Oxides

〇Hanseul Cho1, Joohee Park1, Namhee Kim2, Myung Hwa Kim2, Seokhyun Yoon1 (1. Department of Physics, Ewha Womans University (Korea), 2. Department of Chemistry and Nanoscience, Ewha Womans University (Korea))

[We-P-08]Applications of the Machine-Learned Moment Tensor Potentials in the Atomistic Modeling of Semiconductors

〇Nikita Rybin1,2, Alexander Shapeev1,2 (1. Skolkovo Inst. of Sci. and Tech. (Russia), 2. Digital Materials LLC (Russia))

[We-P-09]Study on Source Concentration Dependence of Mist CVD Growth of β-Ga2O3 Films Using Gallium Oxide Polycrystalline Powder

〇Sota Yamanaka1, Shohei Abe1, Tomohiro Yamaguchi1, Tohru Honda1, Khohei Sasaki2, Akito Kuramata2, Takeyoshi Onuma1 (1. Kogakuin Univ. (Japan), 2. Novel Crystal Technology, Inc. (Japan))

[We-P-10]Control of Al-Doping Concentration in MgO Films Grown by Mist CVD Using Modified Precursor Supply Method

〇Sanshiro Nakashima1, Kotaro Ogawa1, Kyosuke Tanaka1, Takumi Hosaka1, Tomohiro Yamaguchi1, Toru Honda1, Takeyoshi Onuma1 (1. Kogakuin Univ. (Japan))

[We-P-11]Structural, Optical, and Electrical Properties of α-Fe2O3 Thin Films Formed by Oxidation of DC-Sputtered Fe Layers and Their Formation Process

〇Yuta Morimoto1, Hiroshi Katsumata1,2 (1. Graduate School of Sci. and Tech., Meiji Univ. (Japan), 2. School of Sci. and Tech., Meiji Univ. (Japan))

[We-P-12]Characteristic Photoluminescence of Dy3+ doped High Entropy Oxides

〇Joohee Park1, Hansuel Cho1, Jin Qiu1, Seungyeon Lee2, Yeonu Nam2, Florianne Vayer3, Claudia Decorse3, Suyeon Cho2, Seokhyun Yoon1 (1. Department of Physics, Ewha Womans Univ. (Korea), 2. Department of chemical engineering and materials science, Ewha Womans Univ. (Korea), 3. Institut de Chimie Moléculaire et des Matériaux d'Orsay, Université Paris-Saclay (France))

[We-P-13]Controlled Growth of Complex Functional Materials

〇Milan Klicpera1 (1. Charles University (Czech Republic))

[We-P-14]Engineering mid-gap states and non-radiative relaxation dynamics in Fe-doped carbon dot semiconductors for efficient solar-thermal harvesting

〇Jen-Shyang Ni1,2, C.-Y. Hsu1 (1. National Kaohsiung University of Science and Technology (Taiwan), 2. Photo-sensitive Material Advanced Research and Technology Center (Taiwan))

[We-P-15]Oxygen-Deficiency-Driven Hole Pathways in p-type Amorphous Tellurium Oxides

〇Rafael Costa-Amaral1, Yu Kumagai1 (1. Tohoku University (Japan))
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