[We-P] Material growth, structural properties, and characterization (bulk, nanowires, dots)

[We-P-10] Control of Al-Doping Concentration in MgO Films Grown by Mist CVD Using Modified Precursor Supply Method

〇Sanshiro Nakashima¹, Kotaro Ogawa¹, Kyosuke Tanaka¹, Takumi Hosaka¹, Tomohiro Yamaguchi¹, Toru Honda¹, Takeyoshi Onuma¹ (1. Kogakuin Univ. (Japan))

Al-doped MgO Films Were Grown by Mist CVD Using a Modified Precursor Supply Method. High-concentration Al Doping Has No Significant Effect on Surface Flatness. The Al Concentration in MgO Films Was Controlled by Changing the Precursor Solution Concentration.