[We-P] Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies

[We-P-106] Characterization of Energy Relaxation Time of a Silicon Qubit under Readout Conditions

〇Raisei Mizokuchi¹, Ryutaro Matsuoka¹, Shunsuke Ota¹, Itaru Yanagi², Toshiyuki Mine², Ryuta Tsuchiya², Digh Hisamoto², Hiroyuki Mizuno², Tetsuo Kodera¹ (1. Science Tokyo (Japan), 2. Hitachi, Ltd. (Japan))

We study Pauli spin blockade readout in a CMOS silicon double quantum dot. In our experiments, we measure the energy-relaxation time at the readout point (T_1M) using repeated initialization/readout pulses. We then characterize the dependence of T_1M on interdot detuning.