[We-P] Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies | ICPS2026

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13: Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies

[We-P]Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies

Wed. Aug 19, 2026 2:00 PM - 3:45 PM JST
Wed. Aug 19, 2026 5:00 AM - 6:45 AM UTC

Kogakuin Univ. (Poster C7)(Poster)

[We-P-98]Detection of Individual Two-Level Fluctuator Switching in a Silicon Quantum Dot under Low-Noise-Sensitivity Conditions

〇Ryutaro Matsuoka¹, Raisei Mizokuchi¹, Jun Yoneda², Tetsuo Kodera¹ (1. Sci. Tokyo (Japan), 2. The Univ. of Tokyo (Japan))

[We-P-99]Prospects and Challenges of Quantum Dots in the FDSOI Platform for Spin Quantum Computing

〇Sounak Samanta¹, Arnav Jain¹, Kanishk Modi¹, Abhinav Bijlani¹, Varsha Jangir¹, Siddarth Rastogi¹, Lokesh Patra¹, Samaresh Das², Uditendu Mukhopadhyay^1,3, Suddhasatta Mahapatra^1,3 (1. Department of Physics, Indian Inst. of Tech. Bombay (India), 2. Centre for Applied Res. in Electronics (CARE), Indian Inst. of Tech. Delhi (India), 3. Centre of Excellence in Quantum Info., Computing, Sci. & Tech. (CoE QuICST), Indian Inst. of Tech. Bombay (India))

[We-P-100]Single-Shot Charge Detection via RF Reflectometry in a Planar p-Type Silicon Quantum Dot

〇Kenta Ebisawa¹, Yusuke Sato¹, Sayyid Irsyadul Ibad¹, Ryutaro Matsuoka¹, Itaru Yanagi², Toshiyuki Mine², Ryuta Tsuchiya², Dai Hisamoto², Hiroyuki Mizuno², Shunsuke Ota¹, Raisei Mizokuchi¹, Tetsuo Kodera¹ (1. Department of Electrical and Electronic Eng., Inst. of Sci. Tokyo (Japan), 2. Res. and Development Group, Hitachi, Ltd. (Japan))

[We-P-101]High fidelity Hole Spin Qubits in Planar Silicon CMOS

Isaac Vorreiter¹, Jonathan Y. Huang¹, Scott D. Liles¹, Joe Hillier¹, Ruoyu Li^1,2, Bart Raes², Stefan Kubicek², Julien Jussot², Sofie Beyne², Clement Godfrin², Sugandha Sharma², Danny Wan², Nard Dumoulin Stuyck^3,4, Will Gilbert^3,4, Chih Hwan Yang^3,4, Andrew S. Dzurak^3,4, Kristiaan De Greve^5,4, 〇Alexander R. Hamilton¹ (1. School of Physics, UNSW (Australia), 2. IMEC (Belgium), 3. School of Electrical Engineering and Telecommunications, UNSW (Australia), 4. Diraq Pty. Ltd. (Australia), 5. KU Leuven (Belgium))

[We-P-102]Stabilization of a Silicon Quantum Dot Using a Neighbor Subject to Correlated Noise

〇Sora TAKAHASHI¹, Tatsuya MATSUDA^1,2, Ryuta TSUCHIYA³, Toshiyuki MINE³, Digh HISAMOTO³, Hiroyuki MIZUNO³, Tetsuo KODERA², Jun YONEDA¹ (1. The Univ. of Tokyo (Japan), 2. Inst. of Sci. Tokyo (Japan), 3. Hitachi Ltd. (Japan))

[We-P-103]IQ-encoded RF Reflectometry of Multiple Silicon Quantum Dots

〇Yuto Arakawa¹, Raisei Mizokuchi¹, Naoya Negami¹, Itaru Yanagi², Toshiyuki Mine², Ryuta Tsuchiya², Digh Hisamoto², Hiroyuki Mizuno², Tetsuo Kodera¹ (1. Science Tokyo (Japan), 2. R&D Group, Hitachi, Ltd. (Japan))

[We-P-104]Dynamic Control of Tunnel Rates in Gate-Defined Quantum Dots via Virtual Gating

〇Varsha Jangir¹, Devashish Shah¹, Sounak Samanta¹, Siddarth Rastogi¹, Harvey E. Beere³, David A. Ritchie³, Kantimay Das Gupta^1,2, Suddhasatta Mahapatra^1,2 (1. Department of Physics, Indian Inst. of Tech. Bombay (India), 2. Centre of Excellence in Quantum Info., Computing Sci. and Tech., Indian Inst. of Tech. Bombay (India), 3. Semiconductor Physics Group, Cavendish Lab., Univ. of Cambridge (UK))

[We-P-105]Model Based Auto-Tuning of Double Quantum Dots

〇Duanlian Zhang¹, Raisei Mizokuchi¹, Shunsuke Ota¹, Riku Wada¹, Tetsuo Kodera¹ (1. Inst. of Sci. Tokyo (Japan))

[We-P-106]Characterization of Energy Relaxation Time of a Silicon Qubit under Readout Conditions

〇Raisei Mizokuchi¹, Ryutaro Matsuoka¹, Shunsuke Ota¹, Itaru Yanagi², Toshiyuki Mine², Ryuta Tsuchiya², Digh Hisamoto², Hiroyuki Mizuno², Tetsuo Kodera¹ (1. Science Tokyo (Japan), 2. Hitachi, Ltd. (Japan))

[We-P-107]Cryogenic Spin Qubit Package Design for High Density Control Lines and Low Loss Readout

〇Yasuyuki Oikawa¹, Hiroyuki Inoue¹, Fabio Ansaloni², Soren Andresen², Merlin von Soosten² (1. QM technologies Japan (Japan), 2. QM technologies Denmark (Denmark))

[We-P-108]Charge Detection in an InAs Gate-defined Quadruple Quantum Dot

Nozomu Hayashi¹, Haruki Kiyama², Jason T Dong³, Mihir Pendharkar³, Takafumi Fujita¹, Rio Fukai¹, Chris Palmstrøm³, 〇Akira Oiwa¹ (1. The University of Osaka (Japan), 2. Kyusyu University (Japan), 3. University of California Santa Barbara (USA))

[We-P-109]Superconductivity in Ga-Doped Si_xGe_1-x via Ion Implantation and Flash-Lamp Annealing

〇Yu Cheng¹, Yi Li¹, Mao Wang³, Kuo-Chih Lee⁴, Xiao-Kai Yue³, René Hübner¹, Artur Erbe^1,2, Manfred Helm^1,2, Shengqiang Zhou¹, Slawomir Prucnal¹ (1. Helmholtz-Zentrum Dresden-Rossendorf (HZDR) (Germany), 2. Technische Universität Dresden (Germany), 3. College of Physics and Electronic Engineering, Sichuan Normal University (China), 4. National Taiwan University (Taiwan))

[We-P-110]Low-charge noise germanium hole gases for spin qubit and super-semi quantum devices

〇Jiyin Wang¹, Hongqi Xu^1,2 (1. Beijing Academy of Quantum Information Sciences (China), 2. Peking University (China))

[We-P-111]Surface Pretreatments, Trap Densities, and Charge Noise in Ge Quantum Devices

〇Chutian Wen¹, Yuto Arakawa¹, Bo Jiang¹, Ryutaro Matsuoka¹, Raisei Mizokuchi¹, Jean Michel Hartmann², Pierre André Mortemousque², Silvano De Franceschi³, Giordano Scappucci⁴, Tetsuo Kodera¹ (1. Institute of Science Tokyo (Japan), 2. Univ. Grenoble Alpes, CEA, Leti (France), 3. Université Grenoble Alpes, CEA, Grenoble INP (France), 4. QuTech and Kavli Inst. of Nanoscience, Delft Univ. of Tech. (Netherlands))

[We-P-112]Low Charge Noise Level of Holes in Ge/SiGe Quantum Dots

〇Junhang Liu^1,2,3, Dingming Huang¹, Jinyin Wang¹, Hongqi Xu¹ (1. Beijing Academy of Quantum Information Sciences (China), 2. Inst. of Physics CAS (China), 3. Univ. of Chinese Academy of Sciences (China))

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