Presentation Information
[We-P-111]Surface Pretreatments, Trap Densities, and Charge Noise in Ge Quantum Devices
〇Chutian Wen1, Yuto Arakawa1, Bo Jiang1, Ryutaro Matsuoka1, Raisei Mizokuchi1, Jean Michel Hartmann2, Pierre André Mortemousque2, Silvano De Franceschi3, Giordano Scappucci4, Tetsuo Kodera1 (1. Institute of Science Tokyo (Japan), 2. Univ. Grenoble Alpes, CEA, Leti (France), 3. Université Grenoble Alpes, CEA, Grenoble INP (France), 4. QuTech and Kavli Inst. of Nanoscience, Delft Univ. of Tech. (Netherlands))