[We-P] Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies

[We-P-112] Low Charge Noise Level of Holes in Ge/SiGe Quantum Dots

〇Junhang Liu^1,2,3, Dingming Huang¹, Jinyin Wang¹, Hongqi Xu¹ (1. Beijing Academy of Quantum Information Sciences (China), 2. Inst. of Physics CAS (China), 3. Univ. of Chinese Academy of Sciences (China))

We report on low-charge-noise quantum dot devices made from Ge/SiGe heterostructures with engineered layers. The charge noise at 1 Hz is ~0.46 μeV/√Hz, which is lower than reported for Ge heterostructures grown on silicon wafers.