[We-P] Material growth, structural properties, and characterization (bulk, nanowires, dots)

[We-P-12] Characteristic Photoluminescence of Dy³⁺ doped High Entropy Oxides

〇Joohee Park¹, Hansuel Cho¹, Jin Qiu¹, Seungyeon Lee², Yeonu Nam², Florianne Vayer³, Claudia Decorse³, Suyeon Cho², Seokhyun Yoon¹ (1. Department of Physics, Ewha Womans Univ. (Korea), 2. Department of chemical engineering and materials science, Ewha Womans Univ. (Korea), 3. Institut de Chimie Moléculaire et des Matériaux d'Orsay, Université Paris-Saclay (France))

High entropy oxides (HEOs), stabilized by configurational entropy, are investigated using wavelength- and temperature-dependent photoluminescence. Selective activation of Dy³⁺ emission is observed in Dy³⁺-doped Gd-based HEO, revealing emission dependence on excitation energy and thermally assisted carrier activation.