Presentation Information
[We-P-15]Oxygen-Deficiency-Driven Hole Pathways in p-type Amorphous Tellurium Oxides
〇Rafael Costa-Amaral1, Yu Kumagai1 (1. Tohoku University (Japan))
We reveal how oxygen deficiency reorganizes amorphous TeOx into interpenetrating Te-rich and oxide-like domains. Hybrid-functional electronic-structure and defect calculations show Te-rich networks provide valence-edge hole pathways, while tellurium vacancies likely supply holes, enabling p-type conduction in amorphous oxides.