Presentation Information
[We-P-16]Photoinduced Doping at the SiO2/SiC Interface Observed by Graphene Transport
〇Tetsuhiro Owa1, Jin Miura1, Fumiyuki Inamura1, Takashi Ikuta1, Kenzo Maehashi1, Kenji IKUSHIMA1 (1. Tokyo Univ. of A&T (Japan))
Photoinduced doping at the SiO2/SiC interface was observed by graphene transport. The polarity of photoinduced charges was controlled by gate voltage. The accumulated charges persisted for ~104 s after bias removal, which is attributed to trapping at deep interface states. The trapped charges could be optically released into the energy band.