Session Details
[We-P]Wide-bandgap semiconductors and devices
Wed. Aug 19, 2026 2:00 PM - 3:45 PM JST
Wed. Aug 19, 2026 5:00 AM - 6:45 AM UTC
Wed. Aug 19, 2026 5:00 AM - 6:45 AM UTC
Kogakuin Univ. (Poster C2)(Poster)
[We-P-16]Photoinduced Doping at the SiO2/SiC Interface Observed by Graphene Transport
〇Tetsuhiro Owa1, Jin Miura1, Fumiyuki Inamura1, Takashi Ikuta1, Kenzo Maehashi1, Kenji IKUSHIMA1 (1. Tokyo Univ. of A&T (Japan))
[We-P-17]Positron-Induced Luminescence of GaN Substrates
〇FUMIMASA HORIKIRI1, Toshihiro Nakamura1, Kazuo Kuriyama1, Tomoyoshi Mishima1, Tomoaki Nishimura1, Atsushi Kinomura2 (1. Hosei Univ. (Japan), 2. Kyoto Univ. (Japan))
[We-P-18]Evidence of the Indirect Band Nature of Atomically Thin Hexagonal Boron Nitride
〇Lei Fu1, Yuqing Hu2, Ning Tang1, Junxi Duan2, Bo Shen1 (1. Peking Univ. (China), 2. Beijing Inst. of Tech. (China))
[We-P-19]Achieving an Ultra-Thin GaN Channel Layer in AlGaN/GaN/AlN High Electron Mobility Transistors
〇Junchuan Zhang1, Jiaming Wang1, Fujun Xu1, Hao Tian2, Wen Liu2, Bo Shen1 (1. Peking Univ. (China), 2. Xi’an Jiaotong-Liverpool University (China))
[We-P-20]Possibility of Stimulated Emission in Bulk GaN and AlN/GaN Heterostructures at 77 K
〇NORIHISA ISHIDA1 (1. Japan Electronics College (Japan))
[We-P-21]Hard X-ray Photoemission Study of Bulk Single-Crystalline In-Ga-Zn-O
〇Gimpei Tabata1, Goro Shibata1,2, Yunosuke Takahashi1, Ryoya Yamagishi1, Ayumi Kobayashi1, Yasutaka Sawata1, Mario Okawa1,3, Kento Ishigaki1, Akira Yasui4, Yasumasa Takagi4, Jiayi Tang4, Yusuke Kawamura1, Yuto Uruma1, Tadahito Inoue1, Momoka Hirai1, Naoki Kase1, Nobuaki Miyakawa1, Noriaki Hamada5,6, Tomohiko Saitoh1 (1. Department of Applied Physics, Tokyo Univ. of Sci. (Japan), 2. Japan Atomic Energy Agency (Japan), 3. Inst. for Solid State Physics, The Univ. of Tokyo (Japan), 4. Japan Synchrotron Radiation Res. Inst. (Japan), 5. Department of Physics and Astronomy, Tokyo Univ. of Sci. (Japan), 6. R3 Inst. for Newly-Emerging Sci. Design, Osaka Univ. (Japan))
[We-P-22]Enhancement of Weight-Update Linearity and Dynamic Range in Ferroelectric Synaptic Transistors via InGaZnO/ In2O3 Bilayer Channel Engineering
〇Ji-won Jang1, Jin-Gyu Choi1, Hong-Sub Lee1, Sung-Min Yoon1 (1. Kyung Hee Univ. (Korea))
[We-P-23]Optical and electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) grown with the multiple 2DEG channel
Mukta Sharma2, Ajay Kumar1, Kuan-Lin Hsieh1, Chang-Pei Chu1, Kuan-Ying Lee1, 〇Chia-Lung Tsai1 (1. Chang Gung University (Taiwan), 2. National Chin-Yi University of Technology (Taiwan))
[We-P-24]Identification of color centers on the oxidized surface of 4H-SiC
〇Marine Richard1, Natalia Alyabyeva1, Antoine Borel1, Jacques Peretti1, Yann Jousseaume2, Gabriel Ferro2, Fabian Cadiz1, Yves Lassailly1, Léonard Schué1, Alistair Rowe1 (1. CNRS/Ecole Polytechnique (France), 2. CNRS/Université Claude Bernard Lyon 1 (France))
[We-P-25]Single-Shot Reconstruction of Interfacial Energy Barrier Distribution with Solid-State Device Version of Ballistic Electron Emission Spectroscopy
〇Jiwan Kim1, Jaehyeong Jo1, Jungjae Park1, Hyunjae Park1, Eunseok Hyun1, Jisang Lee1, Sejin Oh1, Kibog Park1 (1. Ulsan National Inst. of Sci. and Tech. (UNIST) (Korea))
[We-P-26]Investigation on Optical Quenching in an AlGaN/GaN Heterostructure
〇Xiaoyu Liu1, Xi Tang1, Ziyun Li2, Fengwei Ji1, Xuyan Wu1, Chunyu Zhao2, Hui Li1, Baikui Li3, Jiannong Wang2 (1. Anhui University (China), 2. The Hong Kong University of Science and Technology (China), 3. Shenzhen University (China))
[We-P-27]Growth of Cubic AlN Nanostructures on 3C-SiC Pseudo-Substrates by Plasma-Assisted Molecular Beam Epitaxy
〇Gilberto Gamaliel Díaz Monroy1, Mario Alberto Zambrano Serrano1, Máximo López López1 (1. CINVESTAV (Mexico))
[We-P-28]Impact of ILD Deposition Power on Self-Heating Reliability in B-Doped IGZO TFTs
〇CHIA-CHUAN WU1, William Cheng-Yu Ma1, Ting-Chang Chang1 (1. National Sun Yat-sen Univ. (Taiwan))