[We-P] Wide-bandgap semiconductors and devices

[We-P-17] Positron-Induced Luminescence of GaN Substrates

〇FUMIMASA HORIKIRI¹, Toshihiro Nakamura¹, Kazuo Kuriyama¹, Tomoyoshi Mishima¹, Tomoaki Nishimura¹, Atsushi Kinomura² (1. Hosei Univ. (Japan), 2. Kyoto Univ. (Japan))

We report positron-induced luminescence in GaN using a low-activity ²²Na source (0.25 MBq) with a unique intermediate probing depth. The exhibited a broad emission peak around 540–570 nm were attributed to V_N- or C_N-related defect states in GaN.