[We-P] Wide-bandgap semiconductors and devices

[We-P-18] Evidence of the Indirect Band Nature of Atomically Thin Hexagonal Boron Nitride

〇Lei Fu¹, Yuqing Hu², Ning Tang¹, Junxi Duan², Bo Shen¹ (1. Peking Univ. (China), 2. Beijing Inst. of Tech. (China))

Using deep-UV spectroscopy, we reveal that monolayer BN possesses an indirect bandgap, revising prior direct-gap claims. Band-edge emission emerges at four layers. This spectral evolution demonstrates how interlayer coupling drives progressive flat-band formation at K and M points.