Presentation Information
[We-P-19]Achieving an Ultra-Thin GaN Channel Layer in AlGaN/GaN/AlN High Electron Mobility Transistors
〇Junchuan Zhang1, Jiaming Wang1, Fujun Xu1, Hao Tian2, Wen Liu2, Bo Shen1 (1. Peking Univ. (China), 2. Xi’an Jiaotong-Liverpool University (China))
An ultra-thin GaN channel layer with a root-mean-square roughness of 0.74 nm over 10 × 10 μm2 is demonstrated on an AlN template. HEMTs fabricated on this structure exhibit a high breakdown voltage of 2300 V and an ON/OFF current ratio of 109.