[We-P] Wide-bandgap semiconductors and devices

[We-P-20] Possibility of Stimulated Emission in Bulk GaN and AlN/GaN Heterostructures at 77 K

〇NORIHISA ISHIDA¹ (1. Japan Electronics College (Japan))

Hot carrier dynamics in GaN are investigated under intense crossed electric and magnetic fields at 77 K. Monte Carlo simulations demonstrate that cyclotron motion leads to Landau level formation, potentially enabling 1.4 THz stimulated emission in bulk and HEMT structures.