[We-P] Wide-bandgap semiconductors and devices

[We-P-22] Enhancement of Weight-Update Linearity and Dynamic Range in Ferroelectric Synaptic Transistors via InGaZnO/ In₂O₃ Bilayer Channel Engineering

〇Ji-won Jang¹, Jin-Gyu Choi¹, Hong-Sub Lee¹, Sung-Min Yoon¹ (1. Kyung Hee Univ. (Korea))

We present ferroelectric synapse transistors using P(VDF-TrFE) and an IGZO/In₂O₃ bilayer channel. This architecture effectively mitigates premature conductivity saturation, enhancing linearity and dynamic range. This work establishes wide-bandgap bilayer-channel engineering as a key strategy for high-fidelity neuromorphic hardware.