Presentation Information
[We-P-23]Optical and electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) grown with the multiple 2DEG channel
Mukta Sharma2, Ajay Kumar1, Kuan-Lin Hsieh1, Chang-Pei Chu1, Kuan-Ying Lee1, 〇Chia-Lung Tsai1 (1. Chang Gung University (Taiwan), 2. National Chin-Yi University of Technology (Taiwan))