[We-P] Wide-bandgap semiconductors and devices

[We-P-26] Investigation on Optical Quenching in an AlGaN/GaN Heterostructure

〇Xiaoyu Liu¹, Xi Tang¹, Ziyun Li², Fengwei Ji¹, Xuyan Wu¹, Chunyu Zhao², Hui Li¹, Baikui Li³, Jiannong Wang² (1. Anhui University (China), 2. The Hong Kong University of Science and Technology (China), 3. Shenzhen University (China))

This work investigates the photocurrent generation and quenching in an AlGaN/GaN heterostructure. Photocurrents can be quenched under illumination with a specific wavelength. The influences of light wavelenth and intensities are investigated. The mechanism is explained and electro-optical circuits are demonstrated.