[We-P] Wide-bandgap semiconductors and devices

[We-P-27] Growth of Cubic AlN Nanostructures on 3C-SiC Pseudo-Substrates by Plasma-Assisted Molecular Beam Epitaxy

〇Gilberto Gamaliel Díaz Monroy¹, Mario Alberto Zambrano Serrano¹, Máximo López López¹ (1. CINVESTAV (Mexico))

Cubic AlN nanostructures were grown on 3C-SiC by plasma-assisted molecular beam epitaxy. Growth temperature and nitrogen plasma parameters control the transition from two- to three-dimensional growth and nanostructure formation. RHEED, AFM, and optical spectra confirm morphology changes and strong damping of Fabry–Pérot interference.