Presentation Information
[We-P-28]Impact of ILD Deposition Power on Self-Heating Reliability in B-Doped IGZO TFTs
〇CHIA-CHUAN WU1, William Cheng-Yu Ma1, Ting-Chang Chang1 (1. National Sun Yat-sen Univ. (Taiwan))
B-doped IGZO TFTs with low- and high-power SiO2 ILDs were studied under self-heating stress. The high-power ILD showed smaller threshold-voltage shift but stronger gate-to-drain capacitance increase, revealing a trade-off between improved defect passivation and hydrogen-related drain-side donor-like response.