Session Details

[We-A2-B]Emerging phenomena in 2D materials

Wed. Aug 19, 2026 11:00 AM - 12:30 PM JST
Wed. Aug 19, 2026 2:00 AM - 3:30 AM UTC
Room B (FUJI)(42F)
Chair:Kei Kinoshita(The Univ. of Tokyo)

[We-A2-B-01]Tunable Magnetoelectric transport in Graphenevia a van der Waals Multiferroic

〇Miuko Tanaka1, Shunta Aoki1, Ikoi Sato1, Hao Ou2, Itishree Pradhan1, Ngoc Han Tu3, Yangsong Chen1, Tomohiro Ishii1, Kenji Watanabe4, Takashi Taniguchi4, Michihisa Yamamoto3,1, Masayuki Hashisaka1, Jiang Pu2, Naoki Ogawa3, Toshiya Ideue1 (1. the University of Tokyo (Japan), 2. Institute of Science Tokyo (Japan), 3. RIKEN (Japan), 4. NIMS (Japan))

[We-A2-B-02]Acoustoelectric Hall effect in 2D semiconductors and superconductorsat low temperatures

〇Alexey N Osipov1,2, Valeriia N Ivanova1,3, Anton Parafilo3, Vadim M Kovalev4, Ivan Savenko1,2 (1. Guangdong Technion - Israel Institute of Technology (China), 2. Technion -- Israel Institute of Technology (Israel), 3. Institute for Basic Science (IBS) (Korea), 4. Institute of Semiconductor Physics (Russia))

[We-A2-B-03]Spin Depolarization Signatures in Landau Level Spectra of Monolayer WSe2

〇Alina Wania Rodrigues1,2, Daniel Miravet1, Justin Boddison-Chouinard1,2, Antoine Labbe1,2, Marek Korkusinski2, Louis Gaudreau2, Pawel Hawrylak1 (1. University of Ottawa (Canada), 2. National Research Council (Canada))

[We-A2-B-04]Berry Phase Transition in Folded Bilayer Graphene

〇Hannes Kakuschke1, Lina Bockhorn1, Rolf J. Haug1 (1. Leibniz Univ. Hannover (Germany))

[We-A2-B-05]Direct Visualization of Field-Driven Valence Band Modulation in Electrostatistically Reconfigured Graphene Devices

〇Umidakhon Rayimjonova1, Chin-Yi Huang 1, Yi-Cheng Weng1, Elin Cartwright1, Fredrik O.L. Johansson1, Noemi Vannucchi1,2, Pavel Dudin3, Avila Jose3, Pei Ding3, David Muradas-Belinchón1, Henry Nameirakpam1, Zhaojun Li1, Andreas Lindblad1 and M. Venkata Kamalakar1 (1. Uppsala University (Sweden), 2. Sorbonne Université (France), 3. Synchrotron SOLEIL (France))

[We-A2-B-06]Electrically Switchable Dirac Masses in Twisted Bilayer Graphene with a Unidirectional Superlattice

Hanzhou Tan1,2, 〇Pilkyung Moon1,2,3 (1. New York Univ. Shanghai (China), 2. NYU-ECNU Inst. of Phys. at NYU Shanghai (China), 3. Hanyang Univ. (Korea))