[Mo-1A] MOS Interface Processing

4:00 PM - 4:20 PM JST(7:00 AM - 7:20 AM UTC)

[Mo-1A-03] Enhanced Interface Properties and Channel Mobility in ALD
SiO₂/4H-SiC MOS Devices via High-Temperature Surface
Pretreatment in Hydrogen Ambient

*Mustafa Akif YILDIRIM¹, Vishal Ajit Shah¹, Hidekazu Tsuchida², Koichi Murata², Nikolaos Iosifidis¹, Peter Gammon¹, Marina Antoniou¹, Arne Benjamin Renz¹ (1. Univ. of Warwick (UK), 2. Central Research Institute of Electric Power Indus. (CRIEPI) (Japan))