[Mo-1A] MOS Interface Processing | ICSCRM2026

Session Details

Oral SessionTrack 05 MOS Gate Stack Processing and Characterization

[Mo-1A]MOS Interface Processing

Mon. Sep 28, 2026 3:10 PM - 4:40 PM JST
Mon. Sep 28, 2026 6:10 AM - 7:40 AM UTC

Oral-A(1st Floor, G7+G8)

Chair:Fabrizio Roccaforte(CNR-IMM, Italy), Hirohisa Hirai(National Institute of Industrial Science and Technology, Japan)

3:10 PM - 3:40 PM JST(6:10 AM - 6:40 AM UTC)

[Mo-1A-01]Advanced interface design through two-step hydrogen annealing for high-reliability SiC MOS devices

*Takuma Kobayashi¹, Masahiro Hara¹, Heiji Watanabe¹ (1. UOsaka (Japan))

3:40 PM - 4:00 PM JST(6:40 AM - 7:00 AM UTC)

[Mo-1A-02]The vital role of pre-deposition annealing in diluted hydrogen for achieving high-quality SiC MOS structures

*Shoto Sawada¹, Takuma Kobayashi¹, Hiroki Fujimoto¹, Masahiro Hara¹, Heiji Watanabe¹ (1. Univ. of Osaka (Japan))

4:00 PM - 4:20 PM JST(7:00 AM - 7:20 AM UTC)

[Mo-1A-03]Enhanced Interface Properties and Channel Mobility in ALD
SiO₂/4H-SiC MOS Devices via High-Temperature Surface
Pretreatment in Hydrogen Ambient

*Mustafa Akif YILDIRIM¹, Vishal Ajit Shah¹, Hidekazu Tsuchida², Koichi Murata², Nikolaos Iosifidis¹, Peter Gammon¹, Marina Antoniou¹, Arne Benjamin Renz¹ (1. Univ. of Warwick (UK), 2. Central Research Institute of Electric Power Indus. (CRIEPI) (Japan))

4:20 PM - 4:40 PM JST(7:20 AM - 7:40 AM UTC)

[Mo-1A-04]Insights on the role of NO annealing in the D_it generation in lateral MOSFETs during Gate Switching stress

*Patrick Fiorenza¹, Marco Zignale¹, Simone Milazzo¹, Cateno Marco Camalleri², Laura Scalia², Mario Saggio², Marilena Vivona¹, Filippo Giannazzo¹, Fabrizio Roccaforte¹ (1. CNR-IMM (Italy), 2. STMicroelectronics (Italy))

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Session Details