Presentation Information

[Mo-2A-02]Surface Morphology Evolution During Hydrogen Etching of 4H-SiC (0001) in limited regions

*Alfio Samuele Mancuso1,2, Francesco La Via2, Marco Mauceri3, Massimo Camarda4, Corrado Bongiorno2, Salvatore Pannitteri2, Simona Boninelli2 (1. Univ. of Catania (Italy), 2. Inst. of CNR-IMM (Italy), 3. Manufac. of ASM International (Italy), 4. Res. of STLab (Italy))