[Mo-2A] Metal Contacts and Interface Engineering | ICSCRM2026

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Session Details

Oral SessionTrack 06 Implantation, Contacts, Etching, and Other Processes

[Mo-2A]Metal Contacts and Interface Engineering

Mon. Sep 28, 2026 5:00 PM - 6:30 PM JST
Mon. Sep 28, 2026 8:00 AM - 9:30 AM UTC

Oral-A(1st Floor, G7+G8)

Chair:Shin-Ichiro Kuroki(Hiroshima University, Japan), Arash Salemi(Navitas Semiconductor, USA)

5:00 PM - 5:30 PM JST(8:00 AM - 8:30 AM UTC)

[Mo-2A-01]Status and Prospects for Reduced Specific On-Resistance in Planar and Trench 4H-SiC MOSFETs

*Dallas Morisette¹, Koushik Ramadoss¹, James A Cooper¹ (1. Purdue Univ. (USA))

5:30 PM - 5:50 PM JST(8:30 AM - 8:50 AM UTC)

[Mo-2A-02]Surface Morphology Evolution During Hydrogen Etching of 4H-SiC (0001) in limited regions

*Alfio Samuele Mancuso^1,2, Francesco La Via², Marco Mauceri³, Massimo Camarda⁴, Corrado Bongiorno², Salvatore Pannitteri², Simona Boninelli² (1. Univ. of Catania (Italy), 2. Inst. of CNR-IMM (Italy), 3. Manufac. of ASM International (Italy), 4. Res. of STLab (Italy))

5:50 PM - 6:10 PM JST(8:50 AM - 9:10 AM UTC)

[Mo-2A-03]Processing and characterization of Mo-nitride Schottky contacts on 4H-SiC

*Marilena Vivona¹, Davide Schiera^1,2, Simone Milazzo¹, Marco Zignale¹, Valerio Votadoro¹, Salvatore Di Franco¹, Markus Italia¹, Raffaella Lo Nigro¹, Giuseppe Greco¹, Isodiana Crupi², Patrick Fiorenza¹, Fabrizio Roccaforte¹ (1. CNR-IMM (Italy), 2. Univ. of Palermo (Italy))

6:10 PM - 6:30 PM JST(9:10 AM - 9:30 AM UTC)

[Mo-2A-04]A Novel Non-Alloyed Sc-Based Low Work-Function Metal Scheme for Ohmic Contacts to N-type 4H-SiC

*Abdul Hannan Yeo^1,2, Jay Sin Jie Liew¹, Yu-Chieh Chien¹, Qin Gui Roth Voo¹, Zijie Zheng^1,2, Xiaolin Wang^1,2, Leming Jiao^1,2, Runze Wang¹, Liyuan Liu¹, Lakshmi Kanta Bera¹, Shiv Kumar¹, Umesh Chand¹, Navab Singh¹, Xiao Gong^1,2, Yee Chia Yeo^1,2 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. National Univ. of Singapore (Singapore))

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