Presentation Information
[Mo-P-13]Comparative Study of Warm-Wall Batch and Hot-Wall Single-Wafer Platforms for 4H-SiC Homoepitaxy on 200 mm Wafers for 1200 V Trench-MOSFETs
*Daniel Baierhofer1, Frank Staiger1, Bernd Thomas1, Christian Bierhoff1, Udo Bischof1 (1. Robert Bosch GmbH (Germany))