[Mo-P] Poster Session | ICSCRM2026

Session Details

Poster Session

[Mo-P]Poster Session

Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC

Poster-A (1st Floor)

[Mo-IP]Development of n-type Epitaxial Growth on 300 mm 4H-SiC Wafers

*Weining Qian^1,2, Feihong Huang¹, Kai Yang¹, Gan Feng¹, Yongqiang Sun¹, Junyong Kang², Jianhui Zhao^1,2 (1. Epiworld International Co., Ltd. (China), 2. Xiamen University (China))

[Mo-P-01]Ultra-High Resistivity 4H-SiC Bulk Crystal Grown by HTCVD with Extremely Low Impurity Incorporation

Zhenzhou Yuan¹, *Yuchen Shi², Xu Pang², Xinyu Liu², Qiangqiang Wang¹, Shengping He¹ (1. Chongqing University (China), 2. Hypersics Corp. Ltd. (China))

[Mo-P-02]A New Understanding of Sublimation Growth in SiC and a Proposed Furnace Structure Based on Si-C Phase Relations

*Takehisa Minowa¹, Taichi Abe² (1. Minowa Material Inspiring (Japan), 2. National Inst. for Materials Sci. (NIMS) (Japan))

[Mo-P-03]Effect of off-axis seed orientation on surface morphology during physical vapor transport growth of 4H-SiC crystals

*Shunta Sueda¹, Noboru Ohtani¹ (1. Kwansei Gakuin University (Japan))

[Mo-P-04]Evaluation of Nitrogen Incorporation in Polycrystalline and Polytype SiC wafers by Micro-Raman Spectroscopy

Minoru Oikawa¹, Koutaro Tetsu¹, Kousuke Shimano¹, Shunya Sakane¹, *Haruhiko Udono¹ (1. Ibaraki University (Japan))

[Mo-P-05]Rapid Assessment of Threading Screw Dislocation Suppression During 4H-SiC Growth Initiation Using Few-Millimeter Boules

*John M. Woods¹, Jiuan Wei¹, Ever Velasco¹, James Fischer¹, Xueping Xu¹, Rajan Rengarajan¹ (1. Coherent Corp. (USA))

[Mo-P-06]Distinctive photoluminescence properties of the as-grown surface of physical vapor transport-grown 4H-SiC crystals

*Daichi Iijima¹, Shugo Kawakami¹, Noboru Ohtani¹ (1. Kwansei Gakuin University (Japan))

[Mo-P-07]Dislocation-Induced local property modifications in 4H-SiC crystals grown by physical vapor transport

*Mitsuki Saragai¹, Daito Kamikawa¹, Noboru Ohtani¹ (1. Kwansei Gakuin University (Japan))

[Mo-P-08]Effect of stress on warpage of 4H-SiC substrate

*Hiromasa Suo¹, Masato Ito¹, Tamotsu Yamashita¹, Rimpai Kindaichi¹ (1. Resonac Corp. (Japan))

[Mo-P-09]Effect of dual-zone heat treatment on residual stress and defect conversion in bare 4H-SiC wafers

*Chan-Ho Park¹, Sang-Jin Bae¹, Ho-Gyun Yun¹, Mi-Seon Park¹, Kwang-Hee Jung¹, Jong-Gon Kim¹, Kap-Ryeol Ku², Yun-Ji Shin³, Seong-Min Jeong³, Won-Jae Lee¹ (1. Dong-Eui University (Korea), 2. Ein Crystal (Korea), 3. Korea Institute of Ceramic Engineering and Technology (KICET) (Korea))

[Mo-P-10]Numerical Modeling of Residual Stress-Induced Wafer Warpage in 4H-SiC Substrates

*Magdalena Lang¹, Paul Wimmer¹, Marc Hainke¹, Christian Kranert¹, Jochen Friedrich¹ (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB (Germany))

[Mo-P-11]Influence of Residual Stress on Dislocation Behavior in 4H-SiC during High-Temperature Annealing

*Paul Wimmer¹, Philip Keller², Christian Kranert¹ (1. Fraunhofer IISB (Germany), 2. PVA Technology Hub GmbH (Germany))

[Mo-P-12]Investigation of Graphite Etching by SiC Vapors in the PVT Process

*Yann Gallou^1,2, Fernanda Leite de Azevedo², Abdelmagid El Bakali², Alexandre Potier¹, Andy Covac³, Megan Kephart³, Didier Chaussende² (1. Mersen France (France), 2. Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMaP (France), 3. Mersen US (USA))

[Mo-P-13]Comparative Study of Warm-Wall Batch and Hot-Wall Single-Wafer Platforms for 4H-SiC Homoepitaxy on 200 mm Wafers for 1200 V Trench-MOSFETs

*Daniel Baierhofer¹, Frank Staiger¹, Bernd Thomas¹, Christian Bierhoff¹, Udo Bischof¹ (1. Robert Bosch GmbH (Germany))

[Mo-P-14]Thick SiC Epitaxial Layers grown on Engineered Substrates

*Rachael L. Myers-Ward¹, Nadeemullah A. Mahadik¹, Alec N. Imhof¹, Benjamin J. Sekely¹, Jenifer R. Hajzus¹, Walter Schwarzenbach², Alexis Drouin² (1. U.S. Naval Research Laboratory (USA), 2. Soitec (France))

[Mo-P-15]Optimization of Closed Sublimation Growth for Thick and Smooth Fluorescent 4H-SiC Epilayers

*Aoto Hashiguchi¹, Ryuya Matsumoto¹, Shoki Ohara¹, Kyoya Okawa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Atsushi Suzuki², Eri Akazawa², Weifang Lu³, Satoshi Kamiyama¹ (1. Meijo Univ. (Japan), 2. E&E Evolution Ltd. (Japan), 3. Xiamen Univ. (China))

[Mo-P-16]Alternative Silicon and Carbon Precursors for 4H-SiC Epitaxy

*Maximilian Titl¹, Christian Wissgott¹, Michael Pfeffer², Johannes Koehler², Kevin Albrecht², Birgit Kallinger¹ (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB (Germany), 2. AIXTRON SE (Germany))

[Mo-P-17]Epitaxial Thickness and Surface Roughness Process Control as Enablers for Zero Defect Automotive SiC Power Devices

*Nicolo Piluso¹, Cristiano Calabretta¹, Fabiana Vento¹, Andrea Severino¹, Antonio Rossitto¹, Alice Lombardo¹, Nicoletta Spampinato¹, Antonio Criscuolo¹, Simone Rosin¹, Anna Martiniello¹, Antonio Volzone¹, Dmitrii Rusakov², Sah Kaushik², Pauline Begoc², Federico Buja², Matteo Salamone², Federico Giuffrida², Parikshit Sharma², Paolo Parisi², Giuseppe Arena¹ (1. Indus. STmicroelectronics (Italy), 2. Indus. KLA Corporation (USA))

[Mo-P-18]Defect Reduction in 8-inch 4H-SiC Wafers by Integrated Multi-Wafer Dynamic AGE-ing® Etching/Growth Process

*Taizo Fujiwara¹, Kohei Toda¹, Daichi Dojima¹, Hiroshi Mihara¹, Tadaaki Kaneko^1,2 (1. QureDA Research, Inc. (Japan), 2. Kwansei Gakuin University (Japan))

[Mo-P-19]Comparative Study of Hydrogen Etching Kinetics on Si (0001) and C (000-1) Terminated 4° Off-Cut 4H-SiC

*An Min Amanda Lee^1,2, Shiv Kumar¹, Eng Soon Tok², Umesh Chand¹, Tanmay Ghosh¹, Xuan Sang Nguyen¹, Xiao Gong¹, Navab Singh¹, Yee-Chia Yeo^1,3 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. Department of Physics, National Univ. of Singapore (Singapore), 3. Department of Electrical and Computer Eng., National Univ. of Singapore (Singapore))

[Mo-P-20]SiC 4H Thick Highly p type Doped Epitaxy

*Marco Mauceri¹, Mario Lizzio¹, Vincent Lafage¹, Maria Luisa Alonzo¹, Silvio Preti¹, Marco Zignale², Patrick Fiorenza², Fabrizio Roccaforte² (1. ASM International (Italy), 2. CNR-IMM (Italy))

[Mo-P-21]DFT-validated machine-learning potential for predictive SiC polytype, surface and deformation simulations

*Mohammed Hassan¹, Christopher Künneth², Alfred Kersch¹ (1. Munich University of Applied Sciences (Germany), 2. University of Bayreuth (Germany))

[Mo-P-22]Defect Study of Polycrystalline SiC supporting wafer for SiC engineered substrates

Qiang Wan¹, *Shengjie Yu¹, Jiahao Liao¹, Jiabao Liu¹ (1. Hunan Dezhi New Material Co., Ltd. (China))

[Mo-P-23]Polarity-Driven Phase Transformation and Giant Stress Divergence in UV Nanosecond Laser-Irradiated 4H-SiC

*Ping-Yu Lin¹, Hsiang-En Weng¹, Chiao-Yang Cheng¹, Yi-Chi Lee², Yi-Chang Wu³, Zi-Hao Wang¹, Yan-Kuin Su¹ (1. National Cheng Kung Univ. (Taiwan), 2. Indus. Technology and Research Inst. (Taiwan), 3. GeChi Compound Semiconductor Corp. Ltd (Taiwan))

[Mo-P-24]Semi-Insulating 4H-SiC: Can V⁴⁺ Photoluminescence Be Used as a Characterization Tool for V Concentration?

*Harmke Dorien van Dijk¹, Matthieu Paillet¹, Marcin Zielinski², Rafał Jakieła³, Ahmed Azmi Zahab¹, Jean Roch Huntzinger¹, Hervé Peyre¹, Sandrine Juillaguet¹, Thomas Cohen¹, Olivier Briot¹ (1. L2C CNRS Université de Montpellier (France), 2. Soitec S.A. (France), 3. Inst. of Physics of the Polish Academy of Sciences (Poland))

[Mo-P-25]Recombination-Enhanced Defect Annealing in 4H-SiC

*Orazio Samperi¹, Lasse Vines¹, Anders Hallén² (1. University of Oslo (Norway), 2. KTH Royal Institute of Technology (Sweden))

[Mo-P-26]Annihilation and Local Unfaulting Inside a Triangular Double Shockley-type Stacking Fault in 4H-SiC Epitaxial layer

Soon-Ku Hong¹, Moonkyong Na², Dohyung Kim³, Hyundon Jung³, Natsuko ASANO Asano⁴, *shunsuke asahina^4,5 (1. Chungnam National University (Japan), 2. Korea Electrotechnology Research Institute (Japan), 3. Horiba STEC Korea (Korea), 4. JEOL Ltd (Japan), 5. Tohoku University (Japan))

[Mo-P-27]Low-Temperature Cathodoluminescence Characterization of Residual Defects in High-Dose Al-Implanted 4H-SiC

*Tomoyuki Uchida¹, Shinya Honda¹, Ryuichi Sugie² (1. Toray Research Center, Inc. (Japan), 2. Univ. of Ritsumeikan (Japan))

[Mo-P-28]PL6 centers in 4H-SiC for spin-based quantum technologies

*Raphael Wörnle^1,2,3, Jonathan Körber^1,2, Timo Steidl^1,2, Georgy Astakhov⁴, Durga Dasari^1,2, Vadim Vorobyov^1,2, Florian Kaiser^5,6, Jörg Wrachtrup^1,2,3 (1. 3rd Institute of Physics, University of Stuttgart (Germany), 2. Center for Integrated Quantum Science and Technology (Germany), 3. Max Planck Institute for Solid State Research (Germany), 4. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany), 5. Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST) (Luxembourg), 6. Department of Physics and Materials Science, University of Luxembourg (Luxembourg))

[Mo-P-29]Impact of Strain on the Spin Dynamics of Silicon Vacancy Centers in 4H Silicon Carbide

*Roland Nagy¹, Maximilian Hollendonner¹, Fedor Dzmitryevich Hrunski¹, Kim Ullerich¹, Shravan Kumar Parthasarathy⁴, Wolfgang Knolle⁵, Maximilian Schober³, Durga Bhaktavatsala Rao Dasari², Michel Bockstedte⁵, Daniel Scheller¹ (1. Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany), 2. Universität Stuttgart (Germany), 3. Johannes Kepler Universität Linz (Austria), 4. Fraunhofer Institute for Integrated Systems and Device Technology (Germany), 5. Leibnitz-Institut für Oberflächemodifizierung (Germany))

[Mo-P-30]Toward Scalable Telecom-Band Quantum Emitters: Integration of Chlorine-Defect Centers in 4H-SiC Nanostructures

*Ashin Varghese Mathews^1,2, Andrei N. Anisimov¹, Kalliopi Mavridou¹, Ulrich Kentsch¹, Manfred Helm^1,2, Georgy V. Astakhov¹ (1. Helmholtz-Zentrum Dresden-Rossendorf (Germany), 2. Technische Universität Dresden (Germany))

[Mo-P-31]Theory of Strained Quantum Emitters

*Vytautas Žalandauskas¹, Rokas Silkinis², Lukas Razinkovas², Ali Tayefeh Younesi³, Minh Tuan Luu³, Ronald Ulbricht³, Ulrike Grossner⁴, Lasse Vines¹, Marianne Etzelmüller Bathen^1,4 (1. University of Oslo (Norway), 2. Center for Physical Sciences and Technology (FTMC) (Lithuania), 3. Max-Planck Institut für Polymerforschung (Germany), 4. ETH Zürich (Switzerland))

[Mo-P-32]High-Fidelity Nuclear Spin Quantum Control in Silicon Carbide Color Centers

*Irene Carrión López¹, Pierre Kuna¹, Erik Hesselmeier-Hüttman¹, Jawad Ul-Hassan², Vadim Vorobyov¹, Jörg Wrachtrup^1,3 (1. 3rd Inst. of Physics, Univ. of Stuttgart (Germany), 2. Dpt. of Physics, Chemistry and Biology, Univ. of Linköping (Sweden), 3. Max Planck Inst. for solid state physics (Germany))

ICSCRM2026

Session Details