Presentation Information
[Mo-P-18]Defect Reduction in 8-inch 4H-SiC Wafers by Integrated Multi-Wafer Dynamic AGE-ing® Etching/Growth Process
*Taizo Fujiwara1, Kohei Toda1, Daichi Dojima1, Hiroshi Mihara1, Tadaaki Kaneko1,2 (1. QureDA Research, Inc. (Japan), 2. Kwansei Gakuin University (Japan))