Presentation Information
[Mo-P-19]Comparative Study of Hydrogen Etching Kinetics on Si (0001) and C (000-1) Terminated 4° Off-Cut 4H-SiC
*An Min Amanda Lee1,2, Shiv Kumar1, Eng Soon Tok2, Umesh Chand1, Tanmay Ghosh1, Xuan Sang Nguyen1, Xiao Gong1, Navab Singh1, Yee-Chia Yeo1,3 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. Department of Physics, National Univ. of Singapore (Singapore), 3. Department of Electrical and Computer Eng., National Univ. of Singapore (Singapore))
