Presentation Information
[Mo-P-29]Impact of Strain on the Spin Dynamics of Silicon Vacancy Centers in 4H Silicon Carbide
*Roland Nagy1, Maximilian Hollendonner1, Fedor Dzmitryevich Hrunski1, Kim Ullerich1, Shravan Kumar Parthasarathy4, Wolfgang Knolle5, Maximilian Schober3, Durga Bhaktavatsala Rao Dasari2, Michel Bockstedte5, Daniel Scheller1 (1. Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany), 2. Universität Stuttgart (Germany), 3. Johannes Kepler Universität Linz (Austria), 4. Fraunhofer Institute for Integrated Systems and Device Technology (Germany), 5. Leibnitz-Institut für Oberflächemodifizierung (Germany))