[Mo-P] Poster Session

[Mo-IP] Development of n-type Epitaxial Growth on 300 mm 4H-SiC Wafers

*Weining Qian^1,2, Feihong Huang¹, Kai Yang¹, Gan Feng¹, Yongqiang Sun¹, Junyong Kang², Jianhui Zhao^1,2 (1. Epiworld International Co., Ltd. (China), 2. Xiamen University (China))