[Mo-P] Poster Session

[Mo-P-37] Impact of Process Simulation and Analytical Doping Profile Simulation for 6.5 kV 4H-SiC JBS Diodes

*Xiangzhen Li¹, Yumeng Cai¹, Xiaoguang Wei², Zhibin Zhao^1,2, Guang Zeng³, Feng Yu³, Arne Renz⁴, Kyrylo Melnyk⁴, Zhaoxue Yuan⁴, Marina Antoniou⁴ (1. North China Electric Power University (China), 2. Huairou Laboratory (China), 3. Greenel Semiconductor Co. (China), 4. University of Warwick (UK))