[Mo-P] Poster Session

[Mo-P-39] TCAD-Based Optimization and Experimental Validation of a 3.3kV 4H-SiC MOSFET Utilizing an Epitaxially Grown Current-Spreading Layer

*Stephen A Mancini¹, Seung Yup Jang^1,3, Andrew Binder², Richard Floyd², Robert Kaplar², Jack Flicker², Stan Attcity², Adam Morgan³, Woongje Sung¹ (1. Univ. at Albany (USA), 2. Sandia National Labs (USA), 3. NoMIS Power Corp. (USA))