Presentation Information
[Mo-P-45]Mitigation of bipolar degradation in 4H-SiC power devices using SmartSiCTM engineered substrates
*Endong Zhang1, Alexis Drouin2, Frederic Allibert2, Marcin Zielinski2, Shunta Harada3 (1. Nagoya Inst. of Tech. (Japan), 2. SOITEC (France), 3. Nagoya Univ. (Japan))