Presentation Information
[Mo-P-49]Structural Origin of Inversion Layer Formation via Stacking-Fault-Mediated Hole Transport in 3C/4H-SiC MOS Structures
*Kota Gejo1, Tetsuo Hatakeyama1, Hiroyuki Nagasawa2 (1. Univ. of Toyama Pref (Japan), 2. Cusic Inc (Japan))
