Presentation Information
[Mo-P-52]Measurement of Temperature-Dependent Large-Signal Hysteresis in Output Capacitance of SiC MOSFETs
*Taiki Nishioka1, Hajime Takayama1, Kazutaka Kanegae1, Hiroyuki Nishinaka1, Michihiro Shintani1 (1. Kyoto Inst. of Tech. (Japan))
