Presentation Information
[Mo-P-54]Impact of P+ Body Layout on Capacitance and Third Quadrant Characteristics of Tri-Gate SiC MOSFETs
Pei-Chi Liao1, *Kung-Yen Lee1,2, Pei-Chun Liao1, Ruei-Ci Wu2, Yu-Ying Li1, Yung-Mei Lin1 (1. National Taiwan University (Taiwan), 2. SiCEV Electronics Co., Hsinchu (Taiwan))