Presentation Information
[Mo-P-55]Variation of Dynamic Characteristics in SiC MOSFETs induced by Edge Termination Topology
*PEI-CHUN LIAO1, KUNG-YEN LEE1,2, YAN-YU WEN1, PEI-CHI LIAO1, TIEN-CHIN SHIH2, RUEI-CI WU3 (1. Graduate School of Advanced Technology, National Taiwan Univ. (Taiwan), 2. Department of Engineering Science and Ocean Engineering, National Taiwan Univ. (Taiwan), 3. SiCEV Electronics Co., Ltd., Taiwan (Taiwan))