Presentation Information
[Mo-P-61]A Modified Coupled Charge-driven Reverse Recovery SPICE Model for Describing the Dynamic Behavior of SiC MOSFETs’ Intrinsic Body Diode
*Ting-Fu Chang1, Fu-Jen Hsu1,2, Hsiang-Ting Hung1, Chung-Ju Yu1, Cheng-Tyng Yen1, Chih-Fang Huang2 (1. Fast SiC Semiconductor Inc. (Taiwan), 2. National Tsing Hua University (Taiwan))