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[Mo-P-62]
Simultaneous reduction of SiC/SiO
2
interface states near the conduction and valence band edges by NO annealing
*Shuya Hiraiwa
1
, Kyota Mikami
1
, Mitsuaki Kaneko
1
, Tsunenobu Kimoto
1
(1. Kyoto Univ. (Japan))
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