Session Details
[Mo-P]MOS Gate Stack Processing and Characterization
Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Poster-C(4th Floor, G403+G404)
[Mo-P-62]Simultaneous reduction of SiC/SiO2 interface states near the conduction and valence band edges by NO annealing
*Shuya Hiraiwa1, Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1. Kyoto Univ. (Japan))
[Mo-P-63]Effects of Post-Oxidation Annealing in N2 and Ar on the SiO2/4H-SiC interface properties
*Patrick Fiorenza1, Valerio Votadoro1, Salvatore Ethan Panasci1, Salvatore Di Franco1, Marilena Vivona1, Simone Milazzo1, Marco Zignale1, Filippo Giannazzo1, Fabrizio Roccaforte1 (1. CNR-IMM (Italy))
[Mo-P-64]Impact of Nitrogen Profiles on Interface Passivation, Charge Trapping, and Breakdown Reliability in Thermal and Deposited Gate Oxides
*Runze Wang1, Yu-Chieh Chien1, Zijie Zheng1,2, Xiaolin Wang1,2, Leming Jiao1,2, Liyuan Liu1, Abdul Hannan Yeo1, Qin Gui Voo1, Weijie Wang1, Umesh Chand1, Xiao Gong1,2, Navab Singh1, Yee Chia Yeo1,2 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. Electrical and Computer Engineering, National University of Singapore (NUS) (Singapore))
[Mo-P-65]High Quality SiO2 Growth on SiC using Pulsed Rapid Thermal Oxidation
*Max Pujade1, Jérôme Biscarrat1, Jean-Manuel Decams2, Philippe Godignon1 (1. CEA-Leti (France), 2. AnnealSys (France))
[Mo-P-66]Wafer-Scale Reliability of SiC MOSCAPs With Post-Oxidation NO Rapid Thermal Processing
*Hyeon-Do Kang2, Xiaofan Ma1, Efe Akman1, Mattias Ekström1, Ye-Jin Kim2, Per-Erik Hellström1, Sang-Mo Koo2, Carl-Mikael Zetterling1 (1. KTH Royal Inst. of Tech. (Sweden), 2. Kwangwoon Univ. (Korea))
[Mo-P-67]Physical insight into the channel mobility in 4H-SiC MOSFETs with different post-oxidation annealing steps based on experiments
*QIAN WANG1, Nazareno Donato1, Florin Udrea1, Kyota Mikami2, Tsunenobu Kimoto2 (1. University of Cambridge (UK), 2. University of Kyoto (Japan))
[Mo-P-68]Investigation of the Two-stage Annealed Al-doped HfO2/SiO2/SiC MOS Interfaces for Enhanced MOSFET Short Circuit Robustness
*XINKAI TIAN1, Arne Benjamin Renz1, Mustafa Akif Yildirim1, James Andrew Gott1, Marina Antoniou1, Nereus Agbo2, Paul Taylor2, Philip Andrew Mawby1, Peter Michael Gammon1 (1. Univ. of Warwick (UK), 2. Dynex Semiconductor Ltd. (UK))
[Mo-P-69]Polysilicon Gate and Silicon Nitride Dielectric Interactions in SiC Power MOSFETs: Implications for Reliable Operation
*Sami Bolat1, Pooria Asadollahi1, Edoardo Ceccarelli1, Marco Pocaterra1, Giovanni Alfieri1, Arne Benjamin Renz2, Mustafa Akif Yildirim2, Marina Antoniou2, Elizabeth Buitrago1 (1. Hitachi Energy (Switzerland), 2. Univ. of Warwick (UK))
[Mo-P-90LN]Defect removal mehanisms in SiC MOS structures by two-step hydrogen annealing
*Satoshi Iga1, Takuma Kobayashi1, Masahiro Hara1, Heiji Watanabe1 (1. The University of Osaka (Japan))
[Mo-P-91LN]Visualization of multiple interface states in n-ch and p-ch 4H-SiC
MOSFETs by time-domain charge-pumping technique.
*Yoshiki Yokoyama1, Masahiro Hori2, Yukinori Ono2, Mitsuru Sometani3, Hiroshisa Hirai3, Bunta Shimabukuro1, Heiji Watanabe4, Takahide Umeda1 (1. Univ. of Tsukuba (Japan), 2. Shizuoka Univ. (Japan), 3. AIST (Japan), 4. Univ. of Osaka (Japan))