[Mo-P] Poster Session | ICSCRM2026

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Session Details

Poster Session

[Mo-P]Poster Session

Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC

Poster-C (4th Floor, G403+G404)

[Mo-P-62]Simultaneous reduction of SiC/SiO₂ interface states near the conduction and valence band edges by NO annealing

*Shuya Hiraiwa¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ. (Japan))

[Mo-P-63]Effects of Post-Oxidation Annealing in N₂ and Ar on the SiO₂/4H-SiC interface properties

*Patrick Fiorenza¹, Valerio Votadoro¹, Salvatore Ethan Panasci¹, Salvatore Di Franco¹, Marilena Vivona¹, Simone Milazzo¹, Marco Zignale¹, Filippo Giannazzo¹, Fabrizio Roccaforte¹ (1. CNR-IMM (Italy))

[Mo-P-64]Impact of Nitrogen Profiles on Interface Passivation, Charge Trapping, and Breakdown Reliability in Thermal and Deposited Gate Oxides

*Runze Wang¹, Yu-Chieh Chien¹, Zijie Zheng^1,2, Xiaolin Wang^1,2, Leming Jiao^1,2, Liyuan Liu¹, Abdul Hannan Yeo¹, Qin Gui Voo¹, Weijie Wang¹, Umesh Chand¹, Xiao Gong^1,2, Navab Singh¹, Yee Chia Yeo^1,2 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. Electrical and Computer Engineering, National University of Singapore (NUS) (Singapore))

[Mo-P-65]High Quality SiO₂ Growth on SiC using Pulsed Rapid Thermal Oxidation

*Max Pujade¹, Jérôme Biscarrat¹, Jean-Manuel Decams², Philippe Godignon¹ (1. CEA-Leti (France), 2. AnnealSys (France))

[Mo-P-66]Wafer-Scale Reliability of SiC MOSCAPs With Post-Oxidation NO Rapid Thermal Processing

*Hyeon-Do Kang², Xiaofan Ma¹, Efe Akman¹, Mattias Ekström¹, Ye-Jin Kim², Per-Erik Hellström¹, Sang-Mo Koo², Carl-Mikael Zetterling¹ (1. KTH Royal Inst. of Tech. (Sweden), 2. Kwangwoon Univ. (Korea))

[Mo-P-67]Physical insight into the channel mobility in 4H-SiC MOSFETs with different post-oxidation annealing steps based on experiments

*QIAN WANG¹, Nazareno Donato¹, Florin Udrea¹, Kyota Mikami², Tsunenobu Kimoto² (1. University of Cambridge (UK), 2. University of Kyoto (Japan))

[Mo-P-68]Investigation of the Two-stage Annealed Al-doped HfO₂/SiO₂/SiC MOS Interfaces for Enhanced MOSFET Short Circuit Robustness

*XINKAI TIAN¹, Arne Benjamin Renz¹, Mustafa Akif Yildirim¹, James Andrew Gott¹, Marina Antoniou¹, Nereus Agbo², Paul Taylor², Philip Andrew Mawby¹, Peter Michael Gammon¹ (1. Univ. of Warwick (UK), 2. Dynex Semiconductor Ltd. (UK))

[Mo-P-69]Polysilicon Gate and Silicon Nitride Dielectric Interactions in SiC Power MOSFETs: Implications for Reliable Operation

*Sami Bolat¹, Pooria Asadollahi¹, Edoardo Ceccarelli¹, Marco Pocaterra¹, Giovanni Alfieri¹, Arne Benjamin Renz², Mustafa Akif Yildirim², Marina Antoniou², Elizabeth Buitrago¹ (1. Hitachi Energy (Switzerland), 2. Univ. of Warwick (UK))

[Mo-P-70]Dual-functional Ni/4H-SiC Schottky interfaces: Robust UV and X-ray detection, imaging in extreme environments

*Chowdam Venkata Prasad¹, Sunjae Kim², Beomjun Park³, Geon-Hee Lee¹, Jin-Woo Choi¹, Jeongho Kim⁴, Wan Sik Hwang¹, Jong-Min Oh¹, Sang-Mo Koo¹ (1. Kwangwoon University (Korea), 2. Korea Aerospace University (Korea), 3. Seoul National University (Korea), 4. Sungkyunkwan University School of Medicine (Korea))

[Mo-P-71]Modelling and Verification of Silicon Carbide-based Neutron Detectors

Asim Mumtaz¹, *Ibtisam Alanazi¹, Julien Bordes¹, Jamie Brown¹, Pankaj Joshi¹, David Jenkins¹, Vlado Lazarov¹ (1. University of York (UK))

[Mo-P-72]Temperature-Dependent Output Characteristics of Ni-63-Driven 4H-SiC Betavoltaic Cells

*Young Jo Kim¹, Ha Bin Jeong¹, Jeong Hyun Moon¹, Sung Yun Woo², Young Jun Yoon³, Jae Hwa Seo¹ (1. Korea Electrotechnology Res. Inst. (Korea), 2. Kyungpook National Univ. (Korea), 3. Gyeongkuk National Univ. (Korea))

[Mo-P-73]VNA S-Parameter-Derived Capacitance of SiC MOSFETs Under 900 V Bias Over Temperature

Yuta Tanimoto¹, *Kyoka Nishio¹, Seigo Mori¹, Yuki Nakano¹ (1. ROHM Co., Ltd. (Japan))

[Mo-P-74]Asymmetric Dynamic C_GD During Turn-on and Turn-off of p-GaN HEMTs

*Taehyun Jang¹, Hyemin Kang¹ (1. Korea Inst. of Energy Tech. (Korea))

[Mo-P-75]Investigation of π-gate AlGaN/GaN High Electron Mobility Transistor for Enhanced Breakdown Voltage: A Simulation Study

*Ju-Hwan JEONG¹, Young-Hyun Won¹, Hyun-Seok Kim¹ (1. Dongguk Univ.-Seoul (Korea))

[Mo-P-76]Impact of p-GaN Back Barrier Thickness on DC Performance in GaN-on-SiC HEMTs: A Simulation Study

*Young-Hyun Won¹, Ju-Hwan Jeong¹, Hyun-Seok Kim¹ (1. Dongguk Univ.-Seoul (Korea))

[Mo-P-77]AlGaN/GaN HEMTs on 3C-SiC/Si-substrates with all TiN contact system

Wael Jatal^2,1, Vladislav Kurtash¹, Joern Pezoldt^5,4, Uwe Baumann³, Saadman Abedin¹, *Joerg Pezoldt¹ (1. TU Ilmenau (Germany), 2. X-Fab Semiconductor Foundries GmbH (Germany), 3. IMMS gGmbH (Germany), 4. Swiss Institute of Bioinformatics (Switzerland), 5. École Polytechnique Fédérale de Lausanne (Switzerland))

[Mo-P-78]Electric Field Concentration Analysis and Design Optimization of Double-Sided Cooling SiC MOSFET Power Modules via Gaussian Process Regression - Bayesian Optimization Workflow

*Jeong Hun Song¹, Sang Won Yoon¹ (1. Seoul National Univ. (Korea))

[Mo-P-79]Impact of Surge Current Stress on Asymmetric Trench SiC MOSFETs under Positive Gate Bias

*Wangchen Li¹, Qihong Feng¹, Shuiyou Zheng¹, Huaxing Jiang¹ (1. South China Univ. of Tech. (China))

[Mo-P-80]Comparatitive Evaluation of Switching Performance and dV/dt
Robustness in 1.2 kV SiC MOSFETs with Embedded SBDs and Cascode JFET Devices

*Gyuhyeok Kang¹, seungwan Jung¹, Jinwoo Park¹, Jonghyeon Ryu¹, Ogyun Seok¹ (1. Pusan National University (Korea))

[Mo-P-81]Reliability Analysis and Test Results of Novel Die-Attach Technologies for SiC Baseless Power Modules in EV Charging Application

*Stefano Carboni¹, Andrea Bianchi¹ (1. ABB e-Mobility s.p.a. (Italy))

[Mo-P-85]GaN/SiC Hybrid Switch with Synchronous-Gate-Control Technique for High-Frequency and High-Reliability Applications

*Weihao Lu¹, Sheng Li¹, Yanfeng Ma¹, Mingfei Li¹, Siyang Liu¹, Weifeng Sun¹ (1. Univ. of Southeast (China))

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ICSCRM2026

Session Details

[Mo-P]Poster Session

[Mo-P-62]Simultaneous reduction of SiC/SiO₂ interface states near the conduction and valence band edges by NO annealing

[Mo-P-63]Effects of Post-Oxidation Annealing in N₂ and Ar on the SiO₂/4H-SiC interface properties

[Mo-P-64]Impact of Nitrogen Profiles on Interface Passivation, Charge Trapping, and Breakdown Reliability in Thermal and Deposited Gate Oxides

[Mo-P-65]High Quality SiO₂ Growth on SiC using Pulsed Rapid Thermal Oxidation

[Mo-P-66]Wafer-Scale Reliability of SiC MOSCAPs With Post-Oxidation NO Rapid Thermal Processing

[Mo-P-67]Physical insight into the channel mobility in 4H-SiC MOSFETs with different post-oxidation annealing steps based on experiments

[Mo-P-68]Investigation of the Two-stage Annealed Al-doped HfO₂/SiO₂/SiC MOS Interfaces for Enhanced MOSFET Short Circuit Robustness

[Mo-P-69]Polysilicon Gate and Silicon Nitride Dielectric Interactions in SiC Power MOSFETs: Implications for Reliable Operation

[Mo-P-70]Dual-functional Ni/4H-SiC Schottky interfaces: Robust UV and X-ray detection, imaging in extreme environments

[Mo-P-71]Modelling and Verification of Silicon Carbide-based Neutron Detectors

[Mo-P-72]Temperature-Dependent Output Characteristics of Ni-63-Driven 4H-SiC Betavoltaic Cells

[Mo-P-73]VNA S-Parameter-Derived Capacitance of SiC MOSFETs Under 900 V Bias Over Temperature

[Mo-P-74]Asymmetric Dynamic C_GD During Turn-on and Turn-off of p-GaN HEMTs

[Mo-P-75]Investigation of π-gate AlGaN/GaN High Electron Mobility Transistor for Enhanced Breakdown Voltage: A Simulation Study

[Mo-P-76]Impact of p-GaN Back Barrier Thickness on DC Performance in GaN-on-SiC HEMTs: A Simulation Study

[Mo-P-77]AlGaN/GaN HEMTs on 3C-SiC/Si-substrates with all TiN contact system

[Mo-P-78]Electric Field Concentration Analysis and Design Optimization of Double-Sided Cooling SiC MOSFET Power Modules via Gaussian Process Regression - Bayesian Optimization Workflow

[Mo-P-79]Impact of Surge Current Stress on Asymmetric Trench SiC MOSFETs under Positive Gate Bias

[Mo-P-80]Comparatitive Evaluation of Switching Performance and dV/dt
Robustness in 1.2 kV SiC MOSFETs with Embedded SBDs and Cascode JFET Devices

[Mo-P-81]Reliability Analysis and Test Results of Novel Die-Attach Technologies for SiC Baseless Power Modules in EV Charging Application

[Mo-P-82]Electrothermal Stability of SiC DMOSFET Under High-Frequency Half-Bridge Operation

[Mo-P-83]Impact of the AI Variable Load Profile on SiC MOSFETs Reliability

[Mo-P-84]Thermal Structure Analysis of SiC JFETs Using Gate-Source Voltage Measurements

[Mo-P-85]GaN/SiC Hybrid Switch with Synchronous-Gate-Control Technique for High-Frequency and High-Reliability Applications

Session Details

[Mo-P]Poster Session

[Mo-P-62]Simultaneous reduction of SiC/SiO2 interface states near the conduction and valence band edges by NO annealing

[Mo-P-63]Effects of Post-Oxidation Annealing in N2 and Ar on the SiO2/4H-SiC interface properties

[Mo-P-64]Impact of Nitrogen Profiles on Interface Passivation, Charge Trapping, and Breakdown Reliability in Thermal and Deposited Gate Oxides

[Mo-P-65]High Quality SiO2 Growth on SiC using Pulsed Rapid Thermal Oxidation

[Mo-P-66]Wafer-Scale Reliability of SiC MOSCAPs With Post-Oxidation NO Rapid Thermal Processing

[Mo-P-67]Physical insight into the channel mobility in 4H-SiC MOSFETs with different post-oxidation annealing steps based on experiments

[Mo-P-68]Investigation of the Two-stage Annealed Al-doped HfO2/SiO2/SiC MOS Interfaces for Enhanced MOSFET Short Circuit Robustness

[Mo-P-69]Polysilicon Gate and Silicon Nitride Dielectric Interactions in SiC Power MOSFETs: Implications for Reliable Operation

[Mo-P-70]Dual-functional Ni/4H-SiC Schottky interfaces: Robust UV and X-ray detection, imaging in extreme environments

[Mo-P-71]Modelling and Verification of Silicon Carbide-based Neutron Detectors

[Mo-P-72]Temperature-Dependent Output Characteristics of Ni-63-Driven 4H-SiC Betavoltaic Cells

[Mo-P-73]VNA S-Parameter-Derived Capacitance of SiC MOSFETs Under 900 V Bias Over Temperature

[Mo-P-74]Asymmetric Dynamic CGD During Turn-on and Turn-off of p-GaN HEMTs

[Mo-P-75]Investigation of π-gate AlGaN/GaN High Electron Mobility Transistor for Enhanced Breakdown Voltage: A Simulation Study

[Mo-P-76]Impact of p-GaN Back Barrier Thickness on DC Performance in GaN-on-SiC HEMTs: A Simulation Study

[Mo-P-77]AlGaN/GaN HEMTs on 3C-SiC/Si-substrates with all TiN contact system

[Mo-P-78]Electric Field Concentration Analysis and Design Optimization of Double-Sided Cooling SiC MOSFET Power Modules via Gaussian Process Regression - Bayesian Optimization Workflow

[Mo-P-79]Impact of Surge Current Stress on Asymmetric Trench SiC MOSFETs under Positive Gate Bias

[Mo-P-80]Comparatitive Evaluation of Switching Performance and dV/dtRobustness in 1.2 kV SiC MOSFETs with Embedded SBDs and Cascode JFET Devices

[Mo-P-81]Reliability Analysis and Test Results of Novel Die-Attach Technologies for SiC Baseless Power Modules in EV Charging Application

[Mo-P-82]Electrothermal Stability of SiC DMOSFET Under High-Frequency Half-Bridge Operation

[Mo-P-83]Impact of the AI Variable Load Profile on SiC MOSFETs Reliability

[Mo-P-84]Thermal Structure Analysis of SiC JFETs Using Gate-Source Voltage Measurements

[Mo-P-85]GaN/SiC Hybrid Switch with Synchronous-Gate-Control Technique for High-Frequency and High-Reliability Applications

[Mo-P-62]Simultaneous reduction of SiC/SiO₂ interface states near the conduction and valence band edges by NO annealing

[Mo-P-63]Effects of Post-Oxidation Annealing in N₂ and Ar on the SiO₂/4H-SiC interface properties

[Mo-P-65]High Quality SiO₂ Growth on SiC using Pulsed Rapid Thermal Oxidation

[Mo-P-68]Investigation of the Two-stage Annealed Al-doped HfO₂/SiO₂/SiC MOS Interfaces for Enhanced MOSFET Short Circuit Robustness

[Mo-P-74]Asymmetric Dynamic C_GD During Turn-on and Turn-off of p-GaN HEMTs

[Mo-P-80]Comparatitive Evaluation of Switching Performance and dV/dt
Robustness in 1.2 kV SiC MOSFETs with Embedded SBDs and Cascode JFET Devices