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[Mo-P-64]Impact of Nitrogen Profiles on Interface Passivation, Charge Trapping, and Breakdown Reliability in Thermal and Deposited Gate Oxides

*Runze Wang1, Yu-Chieh Chien1, Zijie Zheng1,2, Xiaolin Wang1,2, Leming Jiao1,2, Liyuan Liu1, Abdul Hannan Yeo1, Qin Gui Voo1, Weijie Wang1, Umesh Chand1, Xiao Gong1,2, Navab Singh1, Yee Chia Yeo1,2 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. Electrical and Computer Engineering, National University of Singapore (NUS) (Singapore))