ICSCRM2026
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[Mo-P-65]
High Quality SiO
2
Growth on SiC using Pulsed Rapid Thermal Oxidation
*Max Pujade
1
, Jérôme Biscarrat
1
, Jean-Manuel Decams
2
, Philippe Godignon
1
(1. CEA-Leti (France), 2. AnnealSys (France))
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