Presentation Information
[Mo-P-67]Physical insight into the channel mobility in 4H-SiC MOSFETs with different post-oxidation annealing steps based on experiments
*QIAN WANG1, Nazareno Donato1, Florin Udrea1, Kyota Mikami2, Tsunenobu Kimoto2 (1. University of Cambridge (UK), 2. University of Kyoto (Japan))