Presentation Information
[Mo-P-68]Investigation of the Two-stage Annealed Al-doped HfO2/SiO2/SiC MOS Interfaces for Enhanced MOSFET Short Circuit Robustness
*XINKAI TIAN1, Arne Benjamin Renz1, Mustafa Akif Yildirim1, James Andrew Gott1, Marina Antoniou1, Nereus Agbo2, Paul Taylor2, Philip Andrew Mawby1, Peter Michael Gammon1 (1. Univ. of Warwick (UK), 2. Dynex Semiconductor Ltd. (UK))